The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Mar. 13, 2008
Jae-hyun Park, Gyeonggi-do, KR;
Hyeong-jun Kim, Seoul, KR;
Won-cheol Jeong, Seoul, KR;
Chang-wook Jeong, Seoul, KR;
Hong-sik Jeong, Gyeonggi-do, KR;
Gi-tae Jeong, Seoul, KR;
Jae-Hyun Park, Gyeonggi-do, KR;
Hyeong-Jun Kim, Seoul, KR;
Won-Cheol Jeong, Seoul, KR;
Chang-Wook Jeong, Seoul, KR;
Hong-sik Jeong, Gyeonggi-do, KR;
Gi-Tae Jeong, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.