The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Aug. 11, 2005
Won-cheol Jeong, Seoul, KR;
Ki-nam Kim, Gyeonggi-do, KR;
Hong-sik Jeong, Gyeonggi-do, KR;
Gi-tae Jeong, Seoul, KR;
Jae-hyun Park, Gyeonggi-do, KR;
Won-Cheol Jeong, Seoul, KR;
Ki-Nam Kim, Gyeonggi-do, KR;
Hong-Sik Jeong, Gyeonggi-do, KR;
Gi-Tae Jeong, Seoul, KR;
Jae-Hyun Park, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.