The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Apr. 09, 2009
Kyung-chang Ryoo, Gyeonggi-do, KR;
Hong-sik Jeong, Gyeonggi-do, KR;
Gi-tae Jeong, Seoul, KR;
Jung-hoon Park, Seoul, KR;
Yoon-jong Song, Seoul, KR;
Kyung-Chang Ryoo, Gyeonggi-do, KR;
Hong-Sik Jeong, Gyeonggi-do, KR;
Gi-Tae Jeong, Seoul, KR;
Jung-Hoon Park, Seoul, KR;
Yoon-Jong Song, Seoul, KR;
Abstract
In a method of forming a phase-change memory unit, a conductive layer is formed on a substrate having a trench. The conductive layer is planarized until the substrate is exposed to form a first electrode. A spacer partially covering the first electrode is formed. A phase-change material layer is formed on the first electrode and the second spacer. A second electrode is formed on the phase-change material layer. Reset/set currents of the phase-change memory unit may be reduced and deterioration of the phase-change material layer may be reduced and/or prevented.