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For the Inventor, By the Inventor

Seongnam, South Korea

Kyung-Chang Ryoo

This inventor holds 20 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Phase Change Memory. Top assignees: Samsung Electronics Co., Ltd., Seoul National University. Active years: 2007-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kyung-Chang Ryoo. Retrieved from https://idiyas.com/inventor/kyung-chang-ryoo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 90.0

 

Average Co-Inventor Count = 4.3

ph-index = 8

Forward Citations = 178(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2007 - 2013)
  • Seongnam-si, KR (2008 - 2020)

Company Filing History:

goldMedal20 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 1,784 
 
Seoul National University
 patents
where one patent can have more than one assignee

Years Active: 2007-2025

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Areas of Expertise:
Phase Change Memory
Resistive Memory
Semiconductor Devices
Memory Device
Data Storage
Thermal Interference
Memory Fabrication
Map Data Generation
Memory Device Path Selection
Wear Leveling
Neuromorphic Systems
20 patents (USPTO):Explore Patents
1. 12423011 - Computing system generating map data, and method of operating the same (2025-09-23),
2. 12164802 - System and method of host and storage device path selection by memory device (2024-12-10),
3. 10629262 - Method of operating resistive memory device capable of reducing write latency (2020-04-21),
4. 10049717 - Wear leveling for storage or memory device (2018-08-14),
5. 9710747 - Neuromophic system and configuration method thereof (2017-07-18),
6. 9230642 - Variable resistance memory device and a variable resistance memory system including the same (2016-01-05),
7. 8472237 - Semiconductor devices and methods of driving the same (2013-06-25),
8. 8384060 - Resistive memory device (2013-02-26),
9. 8164079 - Phase change memory (2012-04-24),
10. 8129214 - Phase change memory devices having dual lower electrodes and methods of fabricating the same (2012-03-06),
11. 8043924 - Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same (2011-10-25),
12. 8026543 - Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same (2011-09-27),
13. 7977662 - Phase-changeable memory devices having reduced susceptibility to thermal interference (2011-07-12),
14. 7932102 - Phase change memory and method of fabricating the same (2011-04-26),
15. 7696508 - Phase change memory devices having dual lower electrodes (2010-04-13),

Title: Kyung-Chang Ryoo: Innovator in Memory Device Technology

Introduction

Kyung-Chang Ryoo is a prominent inventor based in Seongnam-si, South Korea, known for his significant contributions to memory device technologies. With a remarkable portfolio of 19 patents, Ryoo has been at the forefront of innovative solutions that enhance data processing and memory performance.

Latest Patents

Among his latest patents, Ryoo developed a "System and method of host and storage device path selection by memory device." This innovative method operates storage devices, memory devices, host devices, and switches to optimize data paths. The method involves processing user data requests by generating input/output (I/O) stream information based on telemetry data and efficient mapping techniques. Additionally, he holds a patent for a "Method of operating a resistive memory device capable of reducing write latency." This technology outlines methodologies for executing write operations that improve speed and efficiency, vital for advancing memory device functionality.

Career Highlights

Ryoo's career has included notable positions at prestigious organizations, including Samsung Electronics Co., Ltd. and the Seoul National University R&DB Foundation. His work at these institutions has garnered attention and respect in the field of computer engineering, particularly in memory technologies and system optimization.

Collaborations

Throughout his career, Kyung-Chang Ryoo has worked alongside esteemed colleagues, such as Yoon-jong Song and Young-Nam Hwang. Their collaborative efforts have contributed to the successful development of groundbreaking technologies in memory devices, further empowering advancements in the industry.

Conclusion

Kyung-Chang Ryoo's dedication to innovation has made a lasting impact in the realm of memory devices. His extensive portfolio of patents stands as a testament to his expertise and dedication to enhancing technology that supports efficient data management and processing. As memory technology continues to evolve, Ryoo's contributions will undoubtedly play a pivotal role in shaping the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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