The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Apr. 21, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kyung-chang Ryoo, Seongnam-si, KR;
Hongsik Jeong, Seongnam-si, KR;
Daehwan Kang, Seoul, KR;
JaeHee Oh, Seongnam-si, KR;
Jihyung Yu, Anyang-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A variable resistance memory system includes a variable resistance memory device including a memory cell array including first and second areas; and a memory controller configured to control the variable resistance memory device. The first area includes first variable resistance memory cells including a first variable resistance material layer and the second area includes second variable resistance memory cells including a second variable resistance material layer having a metallic doping concentration higher than a metallic doping concentration of the first variable resistance material layer. The first variable resistance memory cells are used as storage and the second variable resistance memory cells are used as a buffer memory.