Anyang-si, South Korea

Jihyung Yu

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 8(Granted Patents)


Location History:

  • Uiwang-si, KR (2014)
  • Anyang-si, KR (2016)

Company Filing History:


Years Active: 2014-2016

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2 patents (USPTO):Explore Patents

Title: Jihyung Yu: Innovator in Variable Resistance Memory Technology

Introduction

Jihyung Yu, an accomplished inventor from Anyang-si, South Korea, is making significant strides in the field of memory technology. With two patented inventions to his name, Yu's contributions are paving the way for advancements in memory devices and integrated circuit technologies.

Latest Patents

Yu's latest patents include innovative designs and functions that highlight his expertise in variable resistance memory. The first patent, titled "Variable Resistance Memory Device and a Variable Resistance Memory System Including the Same," outlines a sophisticated variable resistance memory system featuring a memory cell array. This system is architected with first and second areas, where first variable resistance memory cells serve storage functions while second variable resistance memory cells operate as buffer memory.

His second patent focuses on "Integrated Circuit Semiconductor Devices Including Channel Trenches and Related Methods of Manufacturing." This invention covers a semiconductor substrate embedded with an active region, incorporating a transistor that features spaced-apart source/drain regions and a semiconductor channel region. The innovation includes channel trenches, which are crucial for enhancing the performance of integrated circuits.

Career Highlights

As a member of Samsung Electronics Co., Ltd., Jihyung Yu is positioned at the forefront of technological innovation. His work at one of the largest electronics companies in the world allows him to harness advanced resources and collaborate with a team of leading experts in the field of semiconductor technology.

Collaborations

Throughout his career, Jihyung Yu has collaborated with fellow engineers, including Kyung-Chang Ryoo and Hongsik Jeong. These partnerships have fostered an environment of creativity and innovation, enabling the development of groundbreaking technologies that advance the capabilities of memory devices.

Conclusion

Jihyung Yu's contributions to the realm of variable resistance memory technology are noteworthy. With his innovative patents and collaborative spirit at Samsung Electronics Co., Ltd., he continues to shape the future of memory systems. His work not only enhances current technology but also sets the stage for future advancements in the semiconductor industry.

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