Hwaseong, South Korea

Hoi Sung Chung

This inventor holds 14 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2013-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hoi Sung Chung. Retrieved from https://idiyas.com/inventor/hoi-sung-chung-vkpd33jn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 85.7

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 24(Granted Patents)


Location History:

  • Hwaseong-si, KR (2013 - 2017)
  • Suwon-si, KR (2021)

Company Filing History:


Years Active: 2013-2021

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Areas of Expertise:
Semiconductor Devices
Fabrication Methods
Multilayer Source/Drain
Epitaxial Layer
MOS Transistors
Variable Resistance
Transistor Manufacturing
Field Effect Transistors
Optimized Channel Region
Stressors
Epitaxial Patterns
Recessed Regions
14 patents (USPTO):Explore Patents

Title: Hoi Sung Chung: Innovator in Semiconductor Technology

Introduction

Hoi Sung Chung is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work focuses on developing advanced memory devices and fabrication methods that enhance the performance and efficiency of semiconductor components.

Latest Patents

Among his latest innovations is a variable resistance memory device. This device features memory cells arranged on a substrate, with an insulating structure positioned between the cells. Each memory cell includes a variable resistance pattern and a switching pattern that are vertically stacked. The insulating structure consists of a first insulating pattern between the memory cells and a second insulating pattern that separates the first from each memory cell. Notably, the materials used for the first and second insulating patterns differ, which contributes to the device's functionality.

Another significant patent involves methods of fabricating semiconductor devices. These methods include forming a gate structure on a core-periphery region of a substrate, which also contains a cell region. The process involves creating a gate spacer on the gate structure's sidewall, followed by the formation of impurity regions through ion implantation. Additionally, a stress film is applied, and a recrystallization region is formed by annealing the impurity regions, enhancing the overall performance of the semiconductor device.

Career Highlights

Hoi Sung Chung is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor technology, contributing to the company's reputation for innovation and excellence in electronics.

Collaborations

Throughout his career, Hoi Sung Chung has collaborated with notable colleagues, including Dong Hyuk Kim and Dongsuk Shin. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Hoi Sung Chung's contributions to semiconductor technology through his innovative patents and work at Samsung Electronics Co., Ltd. highlight his role as a key figure in the industry. His advancements in memory devices and fabrication methods continue to influence the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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