The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jun. 30, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Dong Hyuk Kim, Seongnam-si, KR;
Dongsuk Shin, Yongin-si, KR;
Myungsun Kim, Hwaseong-si, KR;
Hoi Sung Chung, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823425 (2013.01); H01L 21/0243 (2013.01); H01L 21/02057 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/823412 (2013.01); H01L 27/088 (2013.01); H01L 29/0847 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 21/3065 (2013.01); H01L 21/30608 (2013.01);
Abstract
A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.