The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Mar. 22, 2012
Dong Hyuk Kim, Seongnam-si, KR;
Dongsuk Shin, Yongin-si, KR;
Myungsun Kim, Hwaseong-si, KR;
Hoi Sung Chung, Hwaseong-si, KR;
Dong Hyuk Kim, Seongnam-si, KR;
Dongsuk Shin, Yongin-si, KR;
Myungsun Kim, Hwaseong-si, KR;
Hoi Sung Chung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes providing a semiconductor substrate including a channel region, forming a gate electrode structure on the channel region of the semiconductor substrate, forming a first trench in the semiconductor substrate, and forming a second trench in the semiconductor device. The first trench may include a first tip that protrudes toward the channel. The second trench may be an enlargement of the first trench and may include a second tip that also protrudes toward the channel region. In some examples, the second tip may protrude further towards the channel region than the first tip.