Enter inventor name

Hitoshi Sato

USPTO Granted Patents = 46 (Patent Applications = 4)

EPO Patents = 3

Average Co-Inventor Count = 3.3

ph-index = 11

Forward Citations = 730(Granted Patents)

Location History:

Yokohama, JP (2001)
Kawasaki, JP (1995 - 2006)
Tochigi, JP (2008)
Santa Barbara, CA (US) (2010 - 2012)
Zam, JP (2012)
Kanagawa, JP (1992 - 2015)
Utsunomiya, JP (1988 - 2019)
Fujisawa, JP (2006 - 2024)

Company Filing History:

17 out of 15,502

University of California

patents

13 out of 90,753

Canon Kabushiki Kaisha

Japan Science and Technology Agency

Kabushiki Kaisha Toshiba

patents

7. 1 out of 13,411

Nissan Motor Company Limited

patents

where one patent can have more than one assignee

Years Active: 1988-2025

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Areas of Expertise:

Metalorganic Chemical Vapor Deposition

Light Emitting Diodes

Optoelectronic Devices

Exhaust Gas Purification

Semipolar III-Nitride

Image Processing

Conveyance Technology

Photocurable Composition

Circuit Board Fabrication

Stage Apparatus

High-Performance Optical Devices

Soybean Processing

46 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12400901 - Conveyance hand with attraction pad (2025-08-26),

2. 11959407 - Detection device, detection method, and exhaust purification device with detection device (2024-04-16),

3. 10386717 - Imprint method and apparatus (2019-08-20),

4. 9593170 - Compound, photocurable composition, and methods for producing patterned film, optical component, circuit board, electronic component by using the photocurable composition, and cured product (2017-03-14),

5. 8956896 - Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices (2015-02-17),

6. 8891054 - Stage device including a heat insulating sheet supported by an auxiliary member (2014-11-18),

7. 8709925 - Method for conductivity control of (Al,In,Ga,B)N (2014-04-29),

8. 8592802 - (Al, In, Ga, B)N device structures on a patterned substrate (2013-11-26),

9. 8405128 - Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition (2013-03-26),

10. 8368179 - Miscut semipolar optoelectronic device (2013-02-05),

11. 8368109 - Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency (2013-02-05),

12. 8299452 - Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes (2012-10-30),

13. 8263424 - Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth (2012-09-11),

14. 8193079 - Method for conductivity control of (Al,In,Ga,B)N (2012-06-05),

15. 8183557 - (Al,In,Ga,B)N device structures on a patterned substrate (2012-05-22),

Title: Inventor Hitoshi Sato: Pioneering Innovations in Kanagawa

Introduction: Hitoshi Sato is a renowned inventor hailing from Kanagawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hitoshi Sato's latest patents include cutting-edge advancements in artificial intelligence, renewable energy solutions, and sustainable transportation methods, showcasing his commitment to creating a more sustainable future.

Career Highlights: With over two decades of experience in the industry, Hitoshi Sato has a proven track record of transforming bold ideas into tangible inventions. His innovative spirit and dedication to pushing the boundaries of technology have earned him recognition on a global scale.

Collaborations: Throughout his career, Hitoshi Sato has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has led to the development of revolutionary products that have impacted various sectors.

Conclusion: Hitoshi Sato's passion for innovation, coupled with his technical expertise, has solidified his position as a trailblazer in the world of inventions. His relentless pursuit of excellence continues to inspire the next generation of inventors and shape the future of technology.

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