The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Jun. 02, 2010
Tadao Hashimoto, Santa Barbara, CA (US);
Hitoshi Sato, Santa Barbara, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Tadao Hashimoto, Santa Barbara, CA (US);
Hitoshi Sato, Santa Barbara, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Japan Science and Technology Agency, Saitama Prefecture, JP;
Abstract
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile