The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Sep. 19, 2008
Applicants:
Michael Iza, Santa Barbara, CA (US);
Hitoshi Sato, Kanagawa, JP;
Eu Jin Hwang, Jeonju, KR;
Steven P. Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Inventors:
Michael Iza, Santa Barbara, CA (US);
Hitoshi Sato, Kanagawa, JP;
Eu Jin Hwang, Jeonju, KR;
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
Abstract
A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InGaN and InGaN where 0<x<1 and 0≦y<1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.