Jeonju, South Korea

Eu Jin Hwang

This inventor holds 2 USPTO granted patents. Top assignee: University of California. Active years: 2012-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eu Jin Hwang. Retrieved from https://idiyas.com/inventor/eu-jin-hwang-iv9o3ql1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2012-2013

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2 patents (USPTO):Explore Patents

Title: The Innovations of Eu Jin Hwang

Introduction

Eu Jin Hwang is a notable inventor based in Jeonju, South Korea. He has made significant contributions to the field of light-emitting diodes (LEDs) through his innovative research and patents. With a total of 2 patents, Hwang's work focuses on advanced nitride device structures.

Latest Patents

Hwang's latest patents include a nitride light-emitting diode on a patterned substrate. This invention comprises a nitride interlayer with at least two periods of alternating layers of InGaN, where 0 < x < 1 and 0 ≤ y < 1. Additionally, it features a nitride-based active region that includes at least one quantum well structure on the nitride interlayer. This technology aims to enhance the efficiency and performance of light-emitting diodes.

Career Highlights

Eu Jin Hwang is affiliated with the University of California, where he continues to advance his research in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Hwang collaborates with esteemed colleagues, including Michael Iza and Hitoshi Sato. These partnerships contribute to the innovative environment in which he works, fostering advancements in the field.

Conclusion

Eu Jin Hwang's contributions to the field of light-emitting diodes exemplify the impact of innovative research in technology. His patents reflect a commitment to enhancing electronic devices through advanced materials and structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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