The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Apr. 05, 2012
Mathew C. Schmidt, Santa Barbara, CA (US);
Kwang Choong Kim, Seoul, KR;
Hitoshi Sato, Kanagawa, JP;
Steven P. Denbaars, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Mathew C. Schmidt, Santa Barbara, CA (US);
Kwang Choong Kim, Seoul, KR;
Hitoshi Sato, Kanagawa, JP;
Steven P. DenBaars, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Japan Science and Technology Agency, Kawaguchi, Saitama Prefecture, JP;
Abstract
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.