The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Feb. 09, 2007
John F. Kaeding, Mountain View, CA (US);
Hitoshi Sato, Santa Barbara, CA (US);
Michael Iza, Santa Barbara, CA (US);
Hirokuni Asamizu, Goleta, CA (US);
Hong Zhong, Temple City, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
John F. Kaeding, Mountain View, CA (US);
Hitoshi Sato, Santa Barbara, CA (US);
Michael Iza, Santa Barbara, CA (US);
Hirokuni Asamizu, Goleta, CA (US);
Hong Zhong, Temple City, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {101} GaN films deposited on {100} MgAlOspinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.