Tokyo, Japan

Hisayuki Imamura

This inventor holds 10 USPTO granted patents and 1 published patent application and 4 EPO patents. Top assignees: Hitachi Metals, Ltd., Hitachi, Ltd.. Active years: 2005-2020.

USPTO Granted Patents = 10 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 75(Granted Patents)


Location History:

  • Saitama-ken, JP (2005 - 2006)
  • Fukaya, JP (2008)
  • Saitama, JP (2011 - 2013)
  • Kitakyushu, JP (2017 - 2018)
  • Tokyo, JP (2014 - 2020)

Company Filing History:


Years Active: 2005-2020

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10 patents (USPTO):Explore Patents

Title: The Innovative Mind of Hisayuki Imamura

Introduction: Hisayuki Imamura is a visionary inventor based in Tokyo, Japan, with an impressive portfolio of 10 patents under his belt. His groundbreaking work in the field of materials engineering and semiconductor devices has earned him recognition in the global innovation community.

Latest Patents:

1. Silicon nitride sintered substrate

2. Silicon nitride sintered substrate sheet

3. Circuit substrate

4. Production method for silicon nitride sintered substrate

His latest patents showcase his expertise in creating advanced silicon nitride sintered substrates with specific characteristics to enhance performance in various applications, such as semiconductor devices and circuit substrates.

Career Highlights: Imamura has made significant contributions during his tenure at renowned companies such as Hitachi Metals, Ltd. and Hitachi, Ltd. He has played a pivotal role in driving innovation and pushing the boundaries of material science and semiconductor technology.

Collaborations: Imamura has collaborated with industry experts like Junichi Watanabe and Youichirou Kaga, pooling their collective knowledge and expertise to develop cutting-edge solutions in the field of semiconductor devices and insulating substrates.

Conclusion: Hisayuki Imamura's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a leading figure in the world of materials engineering and semiconductor devices. His ingenuity continues to inspire future generations of inventors and innovators worldwide.

Profile summary based on public USPTO records.
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