IDiyas

For the Inventor, By the Inventor

Tokyo, Japan

Hisayuki Imamura

USPTO Granted Patents = 10 

 

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 74(Granted Patents)


Location History:

  • Saitama-ken, JP (2005 - 2006)
  • Fukaya, JP (2008)
  • Saitama, JP (2011 - 2013)
  • Kitakyushu, JP (2017 - 2018)
  • Tokyo, JP (2014 - 2020)

Company Filing History:

goldMedal10 out of 2,333 
 
Hitachi Metals, Ltd.
 patents
silverMedal1 out of 42,485 
 
Hitachi, Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2005-2020

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10 patents (USPTO):Explore Patents
1. 10669210 - Silicon nitride sintered substrate, silicon nitride sintered substrate sheet, circuit substrate, and production method for silicon nitride sintered substrate (2020-06-02),
2. 10559509 - Insulating substrate and semiconductor device using same (2020-02-11),
3. 10057992 - Ceramic circuit substrate and its production method (2018-08-21),
4. 9780011 - Brazing material, brazing material paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module (2017-10-03),
5. 8858865 - Silicon nitride substrate manufacturing method, silicon nitride substrate, silicon nitride circuit substrate, and semiconductor module (2014-10-14),
6. 8563869 - Circuit board and semiconductor module using this, production method for circuit board (2013-10-22),
7. 7915533 - Silicon nitride substrate, a manufacturing method of the silicon nitride substrate, a silicon nitride wiring board using the silicon nitride substrate, and semiconductor module (2011-03-29),
8. 7372132 - Resin encapsulated semiconductor device and the production method (2008-05-13),
9. 7031166 - Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and circuit board and thermoelectric module comprising such sintered silicon nitride substrate (2006-04-18),
10. 6846765 - Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and circuit board and thermoelectric module comprising such sintered silicon nitride substrate (2005-01-25),

Title: The Innovative Mind of Hisayuki Imamura

Introduction: Hisayuki Imamura is a visionary inventor based in Tokyo, Japan, with an impressive portfolio of 10 patents under his belt. His groundbreaking work in the field of materials engineering and semiconductor devices has earned him recognition in the global innovation community.

Latest Patents:

1. Silicon nitride sintered substrate

2. Silicon nitride sintered substrate sheet

3. Circuit substrate

4. Production method for silicon nitride sintered substrate

His latest patents showcase his expertise in creating advanced silicon nitride sintered substrates with specific characteristics to enhance performance in various applications, such as semiconductor devices and circuit substrates.

Career Highlights: Imamura has made significant contributions during his tenure at renowned companies such as Hitachi Metals, Ltd. and Hitachi, Ltd. He has played a pivotal role in driving innovation and pushing the boundaries of material science and semiconductor technology.

Collaborations: Imamura has collaborated with industry experts like Junichi Watanabe and Youichirou Kaga, pooling their collective knowledge and expertise to develop cutting-edge solutions in the field of semiconductor devices and insulating substrates.

Conclusion: Hisayuki Imamura's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a leading figure in the world of materials engineering and semiconductor devices. His ingenuity continues to inspire future generations of inventors and innovators worldwide.

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