The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Aug. 09, 2017
Hitachi Metals, Ltd., Tokyo, JP;
Hiroshi Hozoji, Tokyo, JP;
Kenji Hayashi, Tokyo, JP;
Hiroyuki Itoh, Tokyo, JP;
Hisayuki Imamura, Tokyo, JP;
Hiroyuki Nagatomo, Tokyo, JP;
Hitachi Metals, Ltd., Tokyo, JP;
Abstract
In order to address the problem in that, by increasing the gate resistance of a power semiconductor element, while variation of switching time can be controlled, loss due to the gate resistance becomes larger and power efficiency for the entire system is lowered, the present invention provides an insulating substrate capable of uniformizing switching speeds of circuit elements while suppressing influence on power efficiency of the circuit elements. In the insulating substrate according to the present invention, part of a wiring layer is formed as a control signal circuit layer, and part of the control signal circuit layer is formed as a resistance layer that increases input resistance when the circuit element receives a control signal.