The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Apr. 14, 2006
Youichirou Kaga, Saitama, JP;
Hiromi Kikuchi, Saitama, JP;
Hisayuki Imamura, Saitama, JP;
Junichi Watanabe, Saitama, JP;
Youichirou Kaga, Saitama, JP;
Hiromi Kikuchi, Saitama, JP;
Hisayuki Imamura, Saitama, JP;
Junichi Watanabe, Saitama, JP;
Hitachi Metals, Ltd., Tokyo, JP;
Abstract
In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·mor higher and the thermal conductivity of 90 W/m·K or higher can be attained.