Soraku-gun, Japan

Hiroyuki Hosoba

This inventor holds 29 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 1989-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Hosoba. Retrieved from https://idiyas.com/inventor/hiroyuki-hosoba

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 93.1

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 269(Granted Patents)


Location History:

  • Tenri, JP (1989 - 1993)
  • Nara, JP (1989 - 1996)
  • Souraku, JP (1996)
  • Soraku-gun, JP (1998 - 2004)
  • Kyoto, JP (2001 - 2004)
  • Kyoto-fu, JP (2004 - 2008)
  • Souraku-gun, JP (2002 - 2009)

Company Filing History:


Years Active: 1989-2009

Loading Chart...
Areas of Expertise:
Light Emitting Diode
Semiconductor Laser Device
Fabrication Method
Emission Spectrum
Light Emitting Efficiency
Compound Semiconductor
Current Adjusting Layer
Semiconductor Wafer
Grating Structure
Laser Array Device
29 patents (USPTO):Explore Patents

Title: **Innovations of Hiroyuki Hosoba in Semiconductor Technology**

Introduction

Hiroyuki Hosoba is a distinguished inventor based in Souraku-gun, Japan, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 29 patents, his work focuses primarily on semiconductor light-emitting devices, showcasing innovative methodologies that enhance device performance and efficiency.

Latest Patents

Among his latest patents is a groundbreaking semiconductor light-emitting device and its manufacturing method utilizing a GaAs substrate. This innovative design incorporates a Distributed Bragg Reflector (DBR) and multiple layers of AlGaInP, strategically layered above the DBR. By forming a grating pattern on the semiconductor layer through photolithography and etching techniques, Hosoba has successfully reduced radiation angle dependence of light emission wavelength. Furthermore, another notable patent features an n-type AlAs/n-type AlGaAs DBR layer and a p-type (AlGa)InP/p-type AlInP DBR layer, aimed at centering the reflection spectrum at 650 nm to create an efficient quantum well active layer. These advancements not only foster improved functionality but also broaden the application scope of semiconductor devices.

Career Highlights

Hiroyuki Hosoba's career has been marked by a strong commitment to research and innovation. He is currently employed at Sharp Kabushiki Kaisha Corporation, where he continues to push the boundaries of semiconductor technology. His innovative approaches have led to the development of devices that significantly enhance light-emission efficiency, paving the way for more sustainable and effective semiconductor solutions.

Collaborations

Collaborating with esteemed colleagues such as Takahisa Kurahashi and Hiroshi Nakatsu has bolstered Hosoba's research. Together, they have shared insights and expertise, fostering a dynamic collaborative environment that promotes cutting-edge advancements in semiconductor technology.

Conclusion

Hiroyuki Hosoba's extensive contributions to semiconductor light-emitting devices reflect his prowess as an inventor and an innovator. His dedication to enhancing device performance through ingenious manufacturing methods continues to resonate within the industry, solidifying his reputation as a pioneering figure in the field. As he continues his work at Sharp Kabushiki Kaisha Corporation, the future of semiconductor technology appears promising under his influence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…