The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Jul. 21, 2003
Tetsuroh Murakami, Tenri, JP;
Takahisa Kurahashi, Kashiba, JP;
Hiroshi Nakatsu, Tenri, JP;
Hiroyuki Hosoba, Souraku-gun, JP;
Tetsuroh Murakami, Tenri, JP;
Takahisa Kurahashi, Kashiba, JP;
Hiroshi Nakatsu, Tenri, JP;
Hiroyuki Hosoba, Souraku-gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-side electrode formed on the n-type cladding layer side. The p-type cladding layer consists of a first p-type cladding layer positioned closer to the light-emitting layer and having a lower aluminum content and a lower impurity concentration, and a second p-type cladding layer positioned less closer to the light-emitting layer and having a higher aluminum content and a higher impurity concentration. The LED also has a current blocking layer below the p-side electrode for locally blocking electric current flowing from the p-side electrode to the n-side electrode.