The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Sep. 27, 2000
Hiroyuki Hosoba, Kyoto, JP;
Hiroshi Nakatsu, Nara, JP;
Takahisa Kurahashi, Nara, JP;
Tetsuroh Murakami, Nara, JP;
Kazuaki Sasaki, Osaka, JP;
Junichi Nakamura, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of Al Ga As (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of Al Ga In P (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of Al Ga In P (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.