The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Jun. 30, 2000
Takahisa Kurahashi, Kashiba, JP;
Hiroshi Nakatsu, Tenri, JP;
Hiroyuki Hosoba, Kyoto, JP;
Tetsurou Murakami, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Is provided a resonant cavity type light emitting diode having excellent humidity durability and a light output unsaturated even several 10 mA., which is suitable for mass production. The semiconductor light emitting element has a resonator formed by one set of multi-layer reflecting films disposed at a constant distance on a GaAs substrate inclined at an angle of not less than 2 degrees in the direction [011] or [0-1-1] from the plane ( ) and a light emitting layer disposed at a loop position of a standing wave in the resonator, wherein a multi-layer reflecting film disposed on the GaAs substrate side is composed of plural layers of Al Ga As (0 ≦x≦1) and a multi-layer reflecting film disposed on the opposite side of the GaAs substrate is composed of plural layers of Al Ga In P (0≦y≦1, 0≦z≦1), thereby achieving an improved humidity durability and an increased reflection factor by increasing the number of the reflection layers.