The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Feb. 07, 2001
Takahisa Kurahashi, Kashiba, JP;
Hiroyuki Hosoba, Souraku-gun, JP;
Hiroshi Nakatsu, Tenri, JP;
Tetsurou Murakami, Tenri, JP;
Shouichi Ohyama, Ikoma-gun, JP;
Takahisa Kurahashi, Kashiba, JP;
Hiroyuki Hosoba, Souraku-gun, JP;
Hiroshi Nakatsu, Tenri, JP;
Tetsurou Murakami, Tenri, JP;
Shouichi Ohyama, Ikoma-gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
On a GaAs substrate (), are formed a DBR (Distributed Bragg Reflector) (), and a light-emitting layer () made of a plurality of layers of AlGaInP (0≦y≦1, 0≦z≦1) above the DBR (). A semiconductor layer or a plurality of semiconductor layers ()-() having a number of layers of 1 or more are formed on the light-emitting layer (), and a grating pattern for scattering light is formed on a surface of the semiconductor layer () by photolithography and by etching with a sulfuric acid/hydrogen peroxide based etchant. Thus, a semiconductor device small in radiation angle dependence of light emission wavelength, as well as a manufacturing method therefor, are provided.