Hiroyasu Ishida

Title: Hiroyasu Ishida: Innovator in Semiconductor Technology

Introduction

Hiroyasu Ishida is a prominent inventor based in Gunma, Japan, known for his significant contributions to semiconductor technology. With a total of 13 patents to his name, Ishida has made remarkable advancements in the field, particularly in insulated-gate semiconductor devices.

Latest Patents

Ishida's latest patents include an insulated-gate semiconductor device with a protection diode. This innovation features channel regions that are continuous with transistor cells, which are also disposed below a gate pad electrode. The design ensures that the channel region beneath the gate pad electrode is fixed to a source potential, securing a predetermined reverse breakdown voltage between the drain and source without the need for a p+ type impurity region below the entire lower surface of the gate pad electrode. Another notable patent is the insulated gate semiconductor device that integrates a diode and a resistor connected in parallel into the same chip as an IGBT. This design allows for the limitation of dv/dt to a predetermined range within the IGBT chip, preventing breakdown due to increased dv/dt at the user site.

Career Highlights

Throughout his career, Ishida has worked with notable companies such as Sanyo Electric Co., Ltd. and Sanyo Semiconductor Co., Ltd. His work has significantly impacted the development of semiconductor technologies, particularly in enhancing the performance and reliability of insulated-gate devices.

Collaborations

Ishida has collaborated with esteemed colleagues, including Yasunari Noguchi and Yasuyuki Sayama. These partnerships have contributed to the advancement of innovative solutions in the semiconductor industry.

Conclusion

Hiroyasu Ishida's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices, ensuring their reliability and efficiency in various applications.