The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Aug. 31, 2004
Masahito Onda, Gunma, JP;
Hirotoshi Kubo, Gunma, JP;
Shouji Miyahara, Gunma, JP;
Hiroyasu Ishida, Gunma, JP;
Masahito Onda, Gunma, JP;
Hirotoshi Kubo, Gunma, JP;
Shouji Miyahara, Gunma, JP;
Hiroyasu Ishida, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
Conventional power MOSFETs enables prevention of an inversion in a surrounding region surrounding the outer periphery of an element region by a wide annular layer and a wide sealed metal. Since, resultantly, the area of the surrounding region is large, increase in the element region has been restrained. A semiconductor device is hereby provided which has an inversion prevention region containing an MIS (MOS) structure. The width of polysilicon for the inversion prevention region is large enough to prevent an inversion since the area of an oxide film can be increased by the depth of the trench. By this, leakage current can be reduced even though the area of the region surrounding the outer periphery of the element region is not enlarged. In addition, since the element region is enlarged, on-state resistance of the MOSFET can be reduced.