The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Dec. 23, 2009
Applicants:
Shuji Yoneda, Ora-gun, JP;
Hiroyasu Ishida, Takasaki, JP;
Makoto Oikawa, Ota, JP;
Inventors:
Assignees:
SANYO Semiconductor Co., Ltd., Gunma, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
Abstract
By integrating a diode and a resistor connected in parallel into the same chip as an IGBT and connecting a cathode of the diode to a gate of the IGBT, the value of dv/dt can be limited to a predetermined range inside the chip of the IGBT without a deterioration in turn-on characteristics. Since the chip includes a resistor having such a resistance that a dv/dt breakdown of the IGBT can be prevented, the IGBT can be prevented from being broken by an increase in dv/dt at a site (user site) to which the chip is supplied.