The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Sep. 25, 2009
Yasuyuki Sayama, Ota, JP;
Tetsuya Okada, Kumagaya, JP;
Makoto Oikawa, Ota, JP;
Hiroyasu Ishida, Ora-gun, JP;
Kazunari Kushiyama, Ora-gun, JP;
Yasuyuki Sayama, Ota, JP;
Tetsuya Okada, Kumagaya, JP;
Makoto Oikawa, Ota, JP;
Hiroyasu Ishida, Ora-gun, JP;
Kazunari Kushiyama, Ora-gun, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
An n type impurity region is provided below a gate electrode. By setting a gate length to be less than a depth of a channel region, a side surface of the channel region and a side surface of the n type impurity region adjacent to the channel region form a substantially perpendicular junction surface. Thus, since a depletion layer widens uniformly in a depth direction of a substrate, it is possible to secure a predetermined breakdown voltage. Furthermore, since an interval between the channel regions, above which the gate electrode is disposed, is uniform from its surface to its bottom, it is possible to increase an impurity concentration of the n type impurity region, resulting in an achievement of a low on-resistance.