The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Aug. 15, 2007
Hiroyasu Ishida, Oura-gun, JP;
Tadashi Natsume, Oura-gun, JP;
Hiroyasu Ishida, Oura-gun, JP;
Tadashi Natsume, Oura-gun, JP;
Sanyo Electric Co., Ltd, Osaka, JP;
Sanyo Semiconductor Co., Ltd., Gunma, JP;
Abstract
Provided is an insulated gate semiconductor device. In the device, source regions are provided in the entire operation area and a first back gate region is provided below the source region between trenches. Moreover, a second back gate region connected to the first back gate region is provided outside of the source regions. Thereafter, a first electrode layer coming into contact with the source regions is provided in the entire operation area, and a second electrode layer coming into contact with the second back gate regions is provided around the first electrode layer. Accordingly, potentials can be individually applied to the first electrode layer and the second electrode layer. Thus, it is possible to perform control for preventing reverse flow caused by a parasitic diode.