Kanagawa, Japan

Hirokazu Kato

This inventor holds 15 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Renesas Electronics Corporation, Fuji Photo Film Company, Limited, Renesas Electronics America Inc.. Active years: 1990-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hirokazu Kato. Retrieved from https://idiyas.com/inventor/hirokazu-kato-r738f1gk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 100.0


Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 45(Granted Patents)


Location History:

  • Takasaki, JP (2015)
  • Kanagawa, JP (1990 - 2018)
  • Gunma-ken, JP (2016 - 2018)

Company Filing History:


Years Active: 1990-2018

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Areas of Expertise:
Semiconductor Device
Trench MOSFET
Independent Coupled Element
Image Transfer Apparatus
Surface Mount Contact
Connector
Manufacturing Method
Electrical Performance
Thermal Management
Device Architecture
15 patents (USPTO):Explore Patents

Title: The Innovations of Hirokazu Kato: Pioneering Semiconductor Technology

Introduction: Hirokazu Kato is a prominent inventor based in Kanagawa, Japan, holding a remarkable portfolio of 15 patents. His work primarily revolves around advancements in semiconductor devices, contributing significantly to the fields of electronics and power management.

Latest Patents: Kato's recent patent involves a sophisticated semiconductor device that enhances the performance of integrated circuits. This device features a control electrode positioned in the lower part of a trench formed in a semiconductor substrate. A gate electrode is situated at the upper portion inside the trench, with multiple insulating films strategically placed to ensure optimal performance and isolation. Additionally, Kato developed a trench MOSFET featuring an independent coupled element. This innovation includes a trench in the substrate that hosts a conductive element, improving efficiency by reducing power losses and electromagnetic noise in applications such as DC-DC converters.

Career Highlights: Throughout his career, Hirokazu Kato has made substantial contributions while working for industry giants such as Renesas Electronics Corporation and Fuji Photo Film Company, Limited. His expertise has played a vital role in the advancement of semiconductor technology, impacting various electronic applications.

Collaborations: Kato has collaborated with notable professionals in the field, including Tomoaki Uno and Tetsuo Sato. These partnerships have fostered an environment of innovation, allowing for the development of cutting-edge semiconductor solutions that meet the evolving demands of the technology landscape.

Conclusion: Hirokazu Kato stands out as a visionary inventor whose patents continue to influence the semiconductor industry. His dedication to innovation and collaboration has driven advancements that enhance the efficiency and functionality of electronic devices, solidifying his reputation as a leader in technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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