The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Aug. 19, 2012
Applicants:

Tomoaki Uno, Kanagawa, JP;

Yoshitaka Onaya, Kanagawa, JP;

Hirokazu Kato, Kanagawa, JP;

Ryotaro Kudo, Kanagawa, JP;

Koji Saikusa, Kanagawa, JP;

Inventors:

Tomoaki Uno, Kanagawa, JP;

Yoshitaka Onaya, Kanagawa, JP;

Hirokazu Kato, Kanagawa, JP;

Ryotaro Kudo, Kanagawa, JP;

Koji Saikusa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 23/495 (2006.01); H01L 25/16 (2006.01); H02M 1/32 (2007.01); H02M 3/156 (2006.01); H01L 21/8234 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823487 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/40 (2013.01); H01L 25/16 (2013.01); H02M 1/32 (2013.01); H02M 3/156 (2013.01); H01L 24/73 (2013.01); H01L 25/074 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/30107 (2013.01); H02M 2001/0009 (2013.01);
Abstract

A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion, and sealed in a resin. To first and second source pads for outputting the current flowing in the power MOSFET, a metal plate is bonded. A third source pad for sensing the source voltage of the power MOSFET is at a position not overlapping the metal plate. A coupled portion between a source wire forming the third pad and another source wire forming the first and second pads is at a position overlapping the metal plate.


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