The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Sep. 14, 2012
Tetsuo Sato, San Jose, CA (US);
Tomoaki Uno, Takasaki, JP;
Hirokazu Kato, Takasaki, JP;
Nobuyoshi Matsuura, Takasaki, JP;
Tetsuo Sato, San Jose, CA (US);
Tomoaki Uno, Takasaki, JP;
Hirokazu Kato, Takasaki, JP;
Nobuyoshi Matsuura, Takasaki, JP;
Renesas Electronics Corporation, Santa Clara, CA (US);
Abstract
A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.