Renesas Electronics Corporation

Fuji Photo Film Company, Limited

Tyco Electronics Japan G.k.

Renesas Electronics America Inc.

Hirokazu Kato

Tomoaki Uno

Nobuyoshi Matsuura

Tetsuo Sato

Tadatoshi Danno

Ryotaro Kudo

Yoshinori Yoshida

Tsuyoshi Kachi

Nobuyuki Shirai

Kazuyuki Umezu

Keita Takada

Taisuke Nagasaki

Koji Saikusa

Yoshitaka Onaya

Hideo Numabe

Keisuke Furuya

Katsuhiko Funatsu

Mineo Ohta

Kiyoshi Hirota

Yutaka Jimbo

A control electrode GEis formed in a lower portion of a trench TRformed in a semiconductor substrate SUB, and a gate electrode GEis formed in an upper portion inside the trench TR. An insulating film Gis formed between the control electrode GEand a side wall and a bottom surface of the trench TR, an insulating film Gis formed between the side wall of the trench TRand the gate electrode GE, and an insulating film Gis formed between the control electrode GEand the gate electrode GE. A region adjacent to the trench TRincludes an n-type semiconductor region NR for a source, a p-type semiconductor region PR for a channel formation, and a semiconductor region for a drain. A wiring connected to the control electrode GEis not connected to a wiring connected to the gate electrode GE, and is not connected to a wiring connected to the n-type semiconductor region NR for a source.

Semiconductor device

A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.

Trench MOSFET having an independent coupled element in a trench

A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion, and sealed in a resin. To first and second source pads for outputting the current flowing in the power MOSFET, a metal plate is bonded. A third source pad for sensing the source voltage of the power MOSFET is at a position not overlapping the metal plate. A coupled portion between a source wire forming the third pad and another source wire forming the first and second pads is at a position overlapping the metal plate.

Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends.

A semiconductor device is inhibited from being degraded in reliability. The semiconductor device has a tab including a top surface, a bottom surface, and a plurality of side surfaces. Each of the side surfaces of the tab has a first portion continued to the bottom surface of the tab, a second portion located outwardly of the first portion and continued to the top surface of the tab, and a third portion located outwardly of the second portion and continued to the top surface of the tab to face the same direction as each of the first and second portions. In planar view, the outer edge of the semiconductor chip is located between the third portion and the second portion of the tab, and the outer edge of an adhesive material fixing the semiconductor chip to the tab is located between the semiconductor chip and the second portion.

Semiconductor device and method of manufacturing the same

A connector adapted to: (a) extend through an opening in a board to protrude from both a top surface of the board and a bottom surface of the board, (b) secure the connector to the board, and (c) electrically connect a power supply to a terminal on the board. The connector includes a housing having: (a) a leg section, (b) a head section at a first end of the leg section of the housing, and (c) a receiving recess at a second end of the leg section adapted to receive the power supply board. This connector also includes an elastically deformable retainer piece having: a) a cantilever spring section fixed at a first end to the leg section of the housing and adapted to be below the bottom surface of the board, and (b) an apex section at a second end of the cantilever spring section adapted to bear against the bottom surface of the board. This connector further includes an elastically deformable contact protruding from the head section of the housing adapted to contact the terminal of the board.

Connector

A connector includes a surface mount contact and housing. The surface mount contact has a cylindrical portion, a lance, and a pair of surface mount soldering portions. The cylindrical portion has a cylindrical shape into which a wire core of an electrical wire is inserted. The lance is positioned in an intermediate portion of the cylindrical portion along an axial direction thereof and secures the wire core when the electrical wire is inserted. The pair of surface mount soldering portions project from the cylindrical portion. Each of the pair of surface mount soldering portions extend from an end of the cylindrical portion in a direction orthogonal to the axial direction.

Surface mount contact and connector using same

To improve reliability of a semiconductor device A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHSof the sense MOSFET region RG. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RGis surrounded by a region in which the power MOSFET is formed.

An image transfer apparatus for transferring an image recorded on an image sheet to an image-receiving sheet wherein the image sheet and the image-receiving sheet placed one above the other on a guide plate, together with the guide plate and a cover sheet having one end secured to the guide plate for covering the image sheet and the image-receiving sheet, are transported in one direction along a transporting passage and passed through a transfer station, and are subsequently transported in an opposite direction along the transporting passage and are passed again through the transfer station. The apparatus has a takeup device for drawing out the cover sheet as the guide plate is transported in one direction, and for taking up the cover sheet as the guide plate is transported in the opposite direction. Accordingly, it is unnecessary for the operator to manually cover the image sheet and the image-receiving sheet on the guide plate with the cover sheet prior to transfer or to remove the cover sheet from the guide plate after transfer.

Image transfer apparatus and method

An image transfer apparatus for transferring an image on an image sheet to an image-receiving sheet, while the image sheet and the image-receiving sheet are held in a superposed condition, comprises a working station for placing the image sheet and the image-receiving sheet one above the other on a support member to make up a transported sheet assembly, a tacking station for tentatively occuring the image sheet and the image-receiving sheet of the transported sheet assembly together, a transfer station for applying pressure and heat to the transported sheet assembly tentatively secured, and a feed mechanism for feeding the transported sheet assembly through the working station, the tacking station and the transfer station in sequence. Accordingly, the transported sheet assembly is fed automatically by the feed mechanism from the working station through the tacking station and the transfer station in sequence.

Growing community of inventors

Kanagawa, Japan

Hirokazu Kato