The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Jan. 31, 2014
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Hideo Numabe, Kanagawa, JP;
Nobuyuki Shirai, Kanagawa, JP;
Hirokazu Kato, Kanagawa, JP;
Tomoaki Uno, Kanagawa, JP;
Kazuyuki Umezu, Kanagawa, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A control electrode GEis formed in a lower portion of a trench TRformed in a semiconductor substrate SUB, and a gate electrode GEis formed in an upper portion inside the trench TR. An insulating film Gis formed between the control electrode GEand a side wall and a bottom surface of the trench TR, an insulating film Gis formed between the side wall of the trench TRand the gate electrode GE, and an insulating film Gis formed between the control electrode GEand the gate electrode GE. A region adjacent to the trench TRincludes an n-type semiconductor region NR for a source, a p-type semiconductor region PR for a channel formation, and a semiconductor region for a drain. A wiring connected to the control electrode GEis not connected to a wiring connected to the gate electrode GE, and is not connected to a wiring connected to the n-type semiconductor region NR for a source.