Takasaki, Japan

Nobuyuki Shirai

This inventor holds 23 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Renesas Electronics Corporation, Renesas Technology Corp.. Active years: 2004-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuyuki Shirai. Retrieved from https://idiyas.com/inventor/nobuyuki-shirai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 60.9

Average Co-Inventor Count = 2.6

ph-index = 8

Forward Citations = 139(Granted Patents)


Location History:

  • Tokyo, JP (2007 - 2013)
  • Takasaki, JP (2004 - 2016)
  • Kanagawa, JP (2017 - 2018)

Company Filing History:


Years Active: 2004-2018

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Areas of Expertise:
Semiconductor Device
MOSFET
Schottky Junction
Power Supply Circuit
Power Transistors
Integrated Circuit
Manufacturing Method
Switching Power Supply
Power Semiconductor
Barrier Diode
Device Design
Electrical Components
23 patents (USPTO):Explore Patents

Title: Nobuyuki Shirai: A Pioneer in Semiconductor Innovations

Introduction

Nobuyuki Shirai, located in Takasaki, Japan, has established himself as a notable inventor with an impressive portfolio of 23 patents. His contributions to the field of semiconductor technology reflect his innovative spirit and dedication to advancing electronic components.

Latest Patents

Among his latest innovations is a sophisticated semiconductor device featuring a unique design for both the control and gate electrodes. In this device, the control electrode is positioned in the lower portion of a trench formed in a semiconductor substrate, while the gate electrode is situated in the upper portion inside the trench. Multiple insulating films are strategically placed to enhance the device's functionality, including placements between the control electrode, side walls, and the gate electrode. The device also integrates various semiconductor regions, including n-type for the source, p-type for channel formation, and an additional region for the drain. Notably, the wiring associated with the control electrode remains separate from the wiring linked to the gate electrode and the n-type semiconductor region, showcasing a clever design aimed at optimizing performance.

Career Highlights

Nobuyuki Shirai has made significant contributions to the semiconductor industry during his tenure at prominent companies such as Renesas Electronics Corporation and Renesas Technology Corporation. His work in these organizations has not only furthered the development of cutting-edge technologies but has also positioned him as an expert in his field.

Collaborations

Throughout his career, Shirai has collaborated with esteemed colleagues, including Nobuyoshi Matsuura and Yoshito Nakazawa. These partnerships have fostered an environment of innovation and creativity, contributing to the advancement of several significant projects in semiconductor technology.

Conclusion

Nobuyuki Shirai exemplifies the spirit of innovation in the semiconductor field. With his continued efforts and groundbreaking patents, he remains a pivotal figure in the evolution of electronic devices. His dedication to pushing the boundaries of technology continues to inspire future discoveries and advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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