The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Jun. 24, 2012
Tomoaki Uno, Kanagawa, JP;
Yoshitaka Onaya, Kanagawa, JP;
Hirokazu Kato, Kanagawa, JP;
Ryotaro Kudo, Kanagawa, JP;
Koji Saikusa, Kanagawa, JP;
Katsuhiko Funatsu, Kanagawa, JP;
Tomoaki Uno, Kanagawa, JP;
Yoshitaka Onaya, Kanagawa, JP;
Hirokazu Kato, Kanagawa, JP;
Ryotaro Kudo, Kanagawa, JP;
Koji Saikusa, Kanagawa, JP;
Katsuhiko Funatsu, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
To improve reliability of a semiconductor device A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHSof the sense MOSFET region RG. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RGis surrounded by a region in which the power MOSFET is formed.