Tokyo, Japan

Hiroji Ebe

USPTO Granted Patents = 10 

 

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 478(Granted Patents)


Location History:

  • Kawasaki, JP (1994 - 2006)
  • Kanagawa, JP (2010)
  • Tokyo, JP (2008 - 2012)

Company Filing History:


Years Active: 1994-2012

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10 patents (USPTO):Explore Patents

Title: Hiroji Ebe: Innovator in Semiconductor Technology

Introduction

Hiroji Ebe is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on innovative methods for manufacturing semiconductor devices, particularly those utilizing quantum dots.

Latest Patents

Ebe's latest patents include a method of manufacturing a semiconductor device with quantum dots formed by self-assembled growth. This method involves several key steps: forming quantum dots on a base layer through self-assembled growth, irradiating Sb or GaSb to the surface of the base layer before or during the formation of quantum dots, etching the surfaces of the quantum dots with an As raw material gas to remove an InSb layer containing Sb, and finally growing a capping layer on the quantum dots after the InSb layer has been removed. This innovative approach enhances the efficiency and performance of semiconductor devices.

Career Highlights

Throughout his career, Hiroji Ebe has worked with notable organizations, including Fujitsu Corporation and The University of Tokyo. His experience in these esteemed institutions has allowed him to develop and refine his groundbreaking technologies in semiconductor manufacturing.

Collaborations

Ebe has collaborated with esteemed colleagues such as Yasuhiko Arakawa and Akira Sawada. These partnerships have contributed to the advancement of semiconductor research and development.

Conclusion

Hiroji Ebe's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the future of semiconductor manufacturing.

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