The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2006

Filed:

Sep. 16, 2003
Applicants:

Hiroji Ebe, Kawasaki, JP;

Yoshiaki Nakata, Kawasaki, JP;

Mitsuru Sugawara, Kawasaki, JP;

Takashi Kita, Kadoma, JP;

Osamu Wada, Kobe, JP;

Yasuhiko Arakawa, Kawasaki, JP;

Inventors:

Hiroji Ebe, Kawasaki, JP;

Yoshiaki Nakata, Kawasaki, JP;

Mitsuru Sugawara, Kawasaki, JP;

Takashi Kita, Kadoma, JP;

Osamu Wada, Kobe, JP;

Yasuhiko Arakawa, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract

A quantum semiconductor device including quantum dots formed by S-K growth process taking place in a heteroepitaxial system wherein the relationship between the energy level of light holes and the energy level of heavy holes in the valence band is changed by optimizing the in-plane strain and the vertical strain accumulated in a quantum dot.


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