The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Jun. 09, 2000
Prafulla Masalkar, Kawasaki, JP;
Hiroji Ebe, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A first multi-quantum well structure is formed on a GaAs substrate . The first multi-quantum well structure is formed of an AlGaAs barrier layer and a GaAs well layer alternately laid one on the other to form a multi-quantum well. The GaAs barrier layer is not doped with an impurity. A second multi-quantum well structure is formed on the first multi-quantum well structure . The second multi-quantum well structure is formed of an AlGaAs barrier layer and a GaAs well layer alternately laid one on the other to form a multi-quantum well. The GaAs barrier layer is not doped with an impurity. Whereby a required electrode area can be smaller to thereby obtain higher detection sensitivity.