The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Mar. 03, 2006
Ayahito Uetake, Kawasaki, JP;
Hiroji Ebe, Tokyo, JP;
Kenichi Kawaguchi, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
The University of Tokyo, Tokyo, JP;
Abstract
A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.