The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Mar. 13, 2008
Hiroji Ebe, Kanagawa, JP;
Kenichi Kawaguchi, Kawasaki, JP;
Ken Morito, Kawasaki, JP;
Yasuhiko Arakawa, Kanagawa, JP;
Hiroji Ebe, Kanagawa, JP;
Kenichi Kawaguchi, Kawasaki, JP;
Ken Morito, Kawasaki, JP;
Yasuhiko Arakawa, Kanagawa, JP;
Fujitsu Limited, Kawasaki, JP;
The University of Tokyo, Tokyo, JP;
Abstract
A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.