The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Dec. 16, 2010
Yasuhiko Arakawa, Kanagawa, JP;
Denis Guimard, Tokyo, JP;
Shiro Tsukamoto, Tokushima, JP;
Hiroji Ebe, Tokyo, JP;
Mitsuru Sugawara, Kawasaki, JP;
Yasuhiko Arakawa, Kanagawa, JP;
Denis Guimard, Tokyo, JP;
Shiro Tsukamoto, Tokushima, JP;
Hiroji Ebe, Tokyo, JP;
Mitsuru Sugawara, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
The University of Tokyo, Tokyo, JP;
Abstract
The method of manufacturing the semiconductor device comprises the step of forming quantum dotson a base layerby self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layerbefore or in the step of forming quantum dots; the step of etching the surfaces of the quantum dotswith an As raw material gas to thereby remove an InSb layercontaining Sb deposited on the surfaces of the quantum dots; and growing a capping layeron the quantum dotswith the InSb layerremoved.