Mitaka, Japan

Hikari Tajima

This inventor holds 13 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Devices. Top assignees: Kabushiki Kaisha Toshiba, Kioxia Corporation, Toshiba Memory Corporation. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hikari Tajima. Retrieved from https://idiyas.com/inventor/hikari-tajima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 13 

% Patents Active = 84.6

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Koganei Tokyo, JP (2016)
  • Koganei, JP (2016 - 2017)
  • Mitaka, JP (2017 - 2019)
  • Tokyo, JP (2017 - 2022)
  • Mitaka Tokyo, JP (2024)

Company Filing History:


Years Active: 2016-2025

Loading Chart...
Areas of Expertise:
Semiconductor Memory
Non-Volatile Memory
Vertical Channel
Integrated Circuit
Memory Device
Storage Device
Manufacturing Method
Stacked Electrode Layers
Data Reading
Insulating Layer
Device Architecture
Electronics
13 patents (USPTO):Explore Patents

Title: The Remarkable Innovations of Hikari Tajima

Introduction

Hikari Tajima, an accomplished inventor based in Mitaka, Japan, has significantly contributed to the field of semiconductor technology. With a robust portfolio comprising 12 patents, Tajima's innovations exemplify pioneering advancements in electronic devices, particularly in memory storage solutions.

Latest Patents

Among her many contributions, two notable patents stand out. The first is a semiconductor device that features a multilayered construction, incorporating a semiconductor layer with distinct regions, a gate insulating layer, and a first conductive layer composed of a unique combination of metal elements, aluminum, and nitrogen. This innovative design presents a sophisticated approach to improving semiconductor efficiency.

The second significant patent is a non-volatile semiconductor memory device. This device includes crucial components such as a semiconductor region and a complex conductive layer that alternates layers of titanium, aluminum, and nitrogen. The carefully structured layers enhance performance, making the memory device remarkably efficient and reliable.

Career Highlights

Tajima has collaborated with prominent organizations such as Kabushiki Kaisha Toshiba and Toshiba Memory Corporation throughout her career. Her tenure at these innovative companies has enabled her to work at the forefront of technology, pushing the boundaries of what is possible in semiconductor applications.

Collaborations

In her journey, Hikari Tajima has teamed up with notable coworkers, including Takashi Izumida and Masaki Kondo. These professional relationships have fostered an environment of collaboration that has been essential in developing her groundbreaking inventions.

Conclusion

Hikari Tajima's contributions to the field of semiconductor technology underscore her status as a leading inventor in her domain. With a focus on innovative device designs, her patented works continue to influence the landscape of electronic memory solutions, ensuring a lasting impact on future technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…