The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Feb. 11, 2015
Kabushiki Kaisha Toshiba, Tokyo, JP;
Hikari Tajima, Tokyo, JP;
Masaki Kondo, Mie, JP;
Tsukasa Nakai, Mie, JP;
Takashi Izumida, Kanagawa, JP;
Hiroki Tokuhira, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an embodiment, a non-volatile memory device includes first electrodes arranged in a first direction, a second electrode disposed on a side of the first electrodes in the first direction, a semiconductor layer extending in the first direction through the first electrodes and the second electrode, and a memory film provided between the semiconductor layer and each of the first electrodes. The semiconductor layer includes crystal grains and has a first portion and a second portion, the first portion being adjacent to the first electrodes, and the second portion being adjacent to at least a part of the second electrode, wherein the first portion includes a larger crystal grain than a crystal grain in the second portion.