The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Aug. 28, 2020
Kioxia Corporation, Tokyo, JP;
Hikari Tajima, Tokyo, JP;
KIOXIA CORPORATION, Tokyo, JP;
Abstract
According to one or more embodiments, a non-volatile semiconductor memory device includes a semiconductor region, a gate electrode, a charge storage layer, a first insulating layer, a second insulating layers, and a conductive layer. The conductive layer contains titanium (Ti), aluminum (Al) and nitrogen (N) and has a structure in which a plurality of first layers and a plurality of second layers are alternately provided in a thickness direction. Each first layer contains titanium and nitrogen. Each second layer contains aluminum and nitrogen. In the conductive layer, the ratio of aluminum atomic composition to the sum of the titanium atomic composition and the aluminum atomic composition is equal to or less than 50%.