The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Mar. 17, 2016
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Takashi Izumida, Yokohama, JP;
Hikari Tajima, Mitaka, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
According to an embodiment, a semiconductor memory device comprises: a first semiconductor layer extending in a first direction; a first wiring line extending in a second direction intersecting the first direction; a variable resistance layer provided between these first wiring line and first semiconductor layer; and a first gate electrode extending in the first direction and facing the first semiconductor layer via a first insulating layer. In addition, this semiconductor memory device comprises a second gate electrode provided in the first direction with respect to the first wiring line, extending in the second direction in parallel to the first wiring line, and facing the first semiconductor layer. This second gate electrode faces the first semiconductor layer via a second insulating layer. Moreover, this second gate electrode faces the first gate electrode via the second insulating layer, the first semiconductor layer, and the first insulating layer.