Yokohama, Japan

Hideto Furuyama

This inventor holds 161 USPTO granted patents and 50 published patent applications and 21 EPO patents, primarily in Semiconductor Technology (CPC class H01L33-62). Top assignees: Kabushiki Kaisha Toshiba, Alpad Corporation, Sumitomo Electric Industries, Limited. Active years: 1987-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideto Furuyama. Retrieved from https://idiyas.com/inventor/hideto-furuyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 161 

% Patents Active = 58.4

 

Average Co-Inventor Count = 2.1

ph-index = 14

Forward Citations = 1,020(Granted Patents)

Forward Citations (Not Self Cited) = 944(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Oota, JP (1989)
  • Tokyo, JP (1987 - 2008)
  • Kanagawa-ken, JP (2002 - 2017)
  • Yokohama, JP (1993 - 2020)
  • Kanagawa, JP (2010 - 2023)
  • Yokohama Kanagawa, JP (2016 - 2023)

Company Filing History:


Years Active: 1987-2025

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Areas of Expertise:
Semiconductor Module
Light-Emitting Device
Optical Transmission
Manufacturing Method
Charged Particle Beam
Optical Coupling
Micro-Analysis Chip
Electronic Component
Device Manufacturing
Optical Interconnection
Leaf Springs
Chip Transfer
161 patents (USPTO):Explore Patents

Title: Hideto Furuyama: Innovating the Semiconductor Industry

Introduction:

Hideto Furuyama, a prolific inventor based in Yokohama, Japan, has made significant contributions to the field of semiconductor devices. With an impressive portfolio of 155 patents, Furuyama has been instrumental in advancing technology and shaping the industry. This article explores his latest patents, career highlights, and collaborations within renowned companies such as Toshiba and Sumitomo Electric Industries, Limited.

Latest Patents:

Furuyama's recent patents focus on semiconductor devices, highlighting his expertise in this domain. In one embodiment, a semiconductor device features a package substrate, an external electrode, a mounting substrate, and a mounting electrode. The external electrode's signal connection point is positioned at one end in its longitudinal direction, while the mounting electrode's signal connection point is situated at its end. The arrangement of these components allows for efficient signal transmission within the device.

Career Highlights:

Throughout his career, Furuyama has demonstrated a commitment to innovation and solving complex technological challenges. His work with Kabushiki Kaisha Toshiba and Sumitomo Electric Industries, Limited, has brought him numerous accolades and opportunities to advance semiconductor technologies. Notably, his contributions have significantly impacted the development and enhancement of semiconductor devices.

Collaborations:

Furuyama has had the privilege of collaborating with renowned coworkers such as Akihiro Kojima and Yoshiaki Sugizaki. These collaborations have likely played a crucial role in driving forward his innovative ideas and fostering an environment of knowledge sharing. Such cooperative relationships underline the importance of teamwork in the pursuit of technological advancements.

Conclusion:

Hideto Furuyama's extensive patent portfolio and exceptional career in the semiconductor industry have solidified his position as a leading figure in innovation. His advancements in semiconductor devices have paved the way for improved signal transmission and efficiency within these crucial components. As Furuyama continues to innovate and collaborate, it is anticipated that his contributions will further shape the future of the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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