The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Mar. 12, 2019
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Hideto Furuyama, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/42 (2006.01); G02B 6/43 (2006.01); H01S 5/42 (2006.01); H01S 5/042 (2006.01); H01S 5/022 (2006.01); H01L 23/12 (2006.01); G02B 6/36 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
G02B 6/4249 (2013.01); G02B 6/3644 (2013.01); G02B 6/4202 (2013.01); G02B 6/423 (2013.01); G02B 6/4274 (2013.01); G02B 6/43 (2013.01); H01S 5/02284 (2013.01); H01S 5/04256 (2019.08); H01S 5/423 (2013.01); H01L 24/48 (2013.01); H01S 5/02236 (2013.01); H01S 5/02276 (2013.01);
Abstract
According to one embodiment, a via holds an optical fiber and has an opening in at least a first surface of a silicon substrate. An interconnect is provided at a second surface of the silicon substrate and connected to an optical semiconductor element. Side-surface electrodes are provided at a third surface of the silicon substrate. The third surface is other than the first surface and the second surface of the silicon substrate. At least a portion of the side-surface electrodes is connected to the interconnect. At least a portion of the side-surface electrodes have different lengths along the third surface.