The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Sep. 10, 2018
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Hideto Furuyama, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/18 (2006.01); H01L 31/028 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 31/028 (2013.01); H01L 31/022408 (2013.01); H01L 31/1804 (2013.01); H01L 31/1868 (2013.01);
Abstract

According to one embodiment, a semiconductor light receiving element is disclosed. The semiconductor light receiving element includes a Si substrate, a Si pn junction, a passivation film, and a compound semiconductor light receiving layer. The Si avalanche multiplication part is provided on the Si substrate. The Si pn junction surrounds the Si avalanche multiplication part, and includes a junction end part at a height different from that of the Si avalanche multiplication part. The passivation film is provided on the junction end part of the Si pn junction. The compound semiconductor light receiving layer is selectively provided inside a region on the Si pn junction.


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