The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Jul. 03, 2017
Applicant:

Alpad Corporation, Chiyoda-ku, JP;

Inventors:

Hideyuki Tomizawa, Kanazawa, JP;

Akihiro Kojima, Nonoichi, JP;

Miyoko Shimada, Hakusan, JP;

Yosuke Akimoto, Nonichi, JP;

Hideto Furuyama, Yokohama, JP;

Yoshiaki Sugizaki, Fujisawa, JP;

Assignee:

ALPAD Corporation, Chiyoda-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/48 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/385 (2013.01); H01L 33/40 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/486 (2013.01); H01L 33/50 (2013.01);
Abstract

According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.


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