Kabushiki Kaisha Toshiba

Sumitomo Electric Industries, Limited

Alpad Corporation

Toshiba Electronic Devices & Storage Corporation

Kabuhsiki Kaisha Toshiba

Samsung Electronics Co., Ltd.

Hideto Furuyama

Akihiro Kojima

Yoshiaki Sugizaki

Yosuke Akimoto

Miyoko Shimada

Hiroshi Hamasaki

Hiroshi Uemura

Yuzo Hirayama

Kazuya Ohira

Yoichiro Kurita

Kentaro Kobayashi

Genichi Hatakoshi

Tetsuro Itakura

Shinya Ito

Shigeya Kimura

Hideyuki Tomizawa

Hideo Numata

Masaru Nakamura

Motoyasu Morinaga

Mitsuyoshi Endo

Miyuki Shimojuku

Nobuo Suzuki

Hajime Okuda

Shuji Itonaga

Chiaki Takubo

Wataru Sakurai

Keiji Takaoka

Yukihiro Nomura

Tetsuo Sadamasa

Fumitaka Ishibashi

Tamon Kobayashi

Hiroshi Yamada

Kazuhito Saito

Tetsuro Komatsu

Takashi Imoto

Mizunori Ezaki

Haruhiko Yoshida

Atsushi Kurobe

Gen Watari

Hideko Mukaida

Masanobu Ando

Nawoto Motegi

Naoya Ushiyama

Jun'ichi Kinoshita

Kazuhito Higuchi

Susumu Obata

Mitsuhiro Kushibe

Kazuo Shimokawa

Kazuhiro Eguchi

Hiroki Iwanaga

Shinji Nunotani

Akio Amano

Mitsuaki Tamura

Katsuji Kaminishi

Akiya Kimura

Kazuaki Ootsuka

Hiroko Miki

Kenji Shimomura

Toshiya Nakayama

Sadato Hongo

Osamu Takikawa

Hisashi Ito

Kazuo Fujimura

Norio Iizuka

Fumihiko Kuroda

Hirotaka Uemura

Ippei Akita

Makoto Ohashi

Mayumi Sakaguchi

James T Maroney, Iii

Paul W McIlroy

Norio Ilzuka

Tomoyuki Abe

Akhiro Kojima

A distance between outermost parts of alignment chips in a direction normal to a surface of a substrate is different between a first direction and a second direction along terminal placement surfaces. The plurality of alignment chips include a first alignment chip fixed to a first metal pad, and a second alignment chip fixed to a second metal pad. The first alignment chip and the second alignment chip are oriented in different directions on the surface of the substrate. A semiconductor module includes a first side surface part extending in the second direction and facing the first alignment chip, and a groove part formed in a portion of the first side surface part. A portion of the second alignment chip is positioned in the groove part.

Semiconductor module array device

A semiconductor device includes a substrate; a holding member located on the substrate, the holding member including a module placement part and an opening arranged in a first direction; an optical module located in the module placement part and mounted on the substrate; and an optical fiber passing through the opening, the optical fiber being connected with the optical module. The holding member includes a first corner part and a second corner part. The opening is between the first corner part and the second corner part in a direction crossing the first direction. The first corner part and the second corner part are beveled.

Semiconductor device

A semiconductor device includes a substrate; a holding member located on the substrate, the holding member including an optical fiber holding part and a module placement part arranged in a first direction; an optical module located in the module placement part and mounted on the substrate; an optical fiber passing through the optical fiber holding part, the optical fiber being connected with the optical module; and a first leaf spring and a second leaf spring located in the optical fiber holding part, the first leaf spring and the second leaf spring holding the optical fiber between the first leaf spring and the second leaf spring in a direction crossing the first direction.

Semiconductor device including leaf springs for holding optical fiber

According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.

Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device

According to one embodiment, a semiconductor device includes at least a package substrate, an external electrode, a mounting substrate, and a mounting electrode. A signal connection point of the external electrode is provided at an end portion in a longitudinal direction of the external electrode. A signal connection point of the mounting electrode is provided at an end portion of the mounting electrode. The end portion of the mounting electrode is opposite to the signal connection point of the external electrode facing to the mounting electrode in the longitudinal direction.

According to one embodiment, the electrode pads are provided at a surface of the substrate. The metal pad is provided at the surface of the substrate. The electronic component is mounted to the surface of the substrate. The electronic component includes a plurality of opposing electrodes. The opposing electrodes oppose the electrode pads in a direction toward the surface direction and are electrically connected to the electrode pads. The positioning component is fixed to the metal pad. A gap between the positioning component and the electronic component in an in-plane direction of the surface of the substrate is shorter than a minimum distance of the electrode pads.

Electronic component module

A charged particle beam deflection device includes a substrate; a plurality of apertures provided in the substrate; a plurality of electrodes deflecting charged particle beams passing through the apertures; a plurality of light-receiving elements controlling voltages applied to the plurality of electrodes; a first optical coupler coupling continuous light to the substrate; a light distributor distributing light coupled by the first optical coupler into a two-dimensional plane; a plurality of modulators performing intensity modulation of light distributed by the light distributor; and a plurality of second optical couplers coupling the modulated light to the light-receiving elements.

Charged particle beam deflection device

According to one embodiment, a multi-electron beam device includes at least: a light-emitting element array; a drive circuit controlling the light-emitting element array in a desired light emission pattern; a photoelectric film emitting electrons due to light emitted by the light-emitting elements; a microchannel plate having microchannels multiplying the electrons, the microchannels being arranged at positions corresponding to the light-emitting elements of the light-emitting element array; and an aperture array having apertures arranged at positions corresponding to the microchannels, the apertures being narrower than output apertures of the microchannels and limiting electron beam sizes emitted from the microchannel plate. At least the photoelectric film, the microchannel plate, and the aperture array are disposed inside a vacuum optical column.

Multi-electron beam device

According to one embodiment, a via holds an optical fiber and has an opening in at least a first surface of a silicon substrate. An interconnect is provided at a second surface of the silicon substrate and connected to an optical semiconductor element. Side-surface electrodes are provided at a third surface of the silicon substrate. The third surface is other than the first surface and the second surface of the silicon substrate. At least a portion of the side-surface electrodes is connected to the interconnect. At least a portion of the side-surface electrodes have different lengths along the third surface.

Optical transmission device, method for manufacturing same, and optical transmission module

According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

Semiconductor light-emitting device

According to one embodiment, a semiconductor light receiving element is disclosed. The semiconductor light receiving element includes a Si substrate, a Si pn junction, a passivation film, and a compound semiconductor light receiving layer. The Si avalanche multiplication part is provided on the Si substrate. The Si pn junction surrounds the Si avalanche multiplication part, and includes a junction end part at a height different from that of the Si avalanche multiplication part. The passivation film is provided on the junction end part of the Si pn junction. The compound semiconductor light receiving layer is selectively provided inside a region on the Si pn junction.

Semiconductor light receiving element including si avalanche multiplication part and compound semiconductor light receiving layer

According to one embodiment, a chip transfer member includes a light-transmitting portion and a metal portion. The light-transmitting portion has a light incident surface, a light-emitting surface, and a side surface. The metal portion is provided at the side surface of the light-transmitting portion.

Chip transfer member, chip transfer apparatus, and chip transfer method

The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.

Semiconductor light emitting device

Growing community of inventors

Yokohama, Japan

Hideto Furuyama